The effects of zinc-doping on the composition of InGaAsP layers grown by MOCVD
| Autor: | O. Salehzadeh, C. He, Anthony J. SpringThorpe, W. Benyon |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Doping Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Zinc Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Semiconducting quaternary alloys X-ray diffraction Inorganic Chemistry chemistry 0103 physical sciences Materials Chemistry Metalorganic chemical vapour deposition Metalorganic vapour phase epitaxy Gallium 0210 nano-technology Indium Stoichiometry Arsenic |
| Zdroj: | Journal of Crystal Growth. 445:110-114 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2016.04.053 |
| Popis: | We report on the effects of Zn-doping using diethylzinc (DEZn) on the growth of In₁₋xGaxAsyP₁₋y quaternary layers (x=0.18–0.41 and y=0.34–0.76) by metalorganic chemical vapour deposition. Independent of the quaternary layer compositions, a systematic reduction (increase) in Indium (Gallium) was observed. This was accompanied by a reduction in the overall growth rate, and increased tensile strain, with increasing DEZn flow. In contrast, the dependence of arsenic/phosphorus incorporation on DEZn flow was found to depend on the surface stoichiometry. We show quantitatively that the observed tensile strain can be explained by compositional variations caused by the Zn-doping process. These results suggest that DEZn affects both homogeneous and heterogeneous processes during the growth of InGaAsP layers. |
| Databáze: | OpenAIRE |
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