Model investigations on the effect of Si transport on the nanocrystallization of amorphous FeSiB-(Cu,Nb)

Autor:	G. Henninger, Steffen Oswald, D. Hofman, Stefan Baunack
Rok vydání:	2002
Předmět:	Materials science Silicon Metallurgy chemistry.chemical_element Sputter deposition Biochemistry Nanocrystalline material Analytical Chemistry Amorphous solid law.invention chemistry Nanocrystal law Cavity magnetron Crystallization Thin film
Zdroj:	Analytical and Bioanalytical Chemistry. 374:736-741
ISSN:	1618-2650 1618-2642
DOI:	10.1007/s00216-002-1544-z
Popis:	Amorphous material of the class FeSiB-(Cu,Nb) has been investigated with a background of soft-magnetic application of the corresponding nanocrystalline material. Thin-film analytical methods (SIMS, AES, TEM) have been used to study the diffusion of Si in such materials prepared as layer systems by magnetron sputter deposition. Significant interdiffusion occurs even at low temperatures - approximately 400 degrees C. Quantitative description failed, however, because formation of new iron monosilicide phases begins above this temperature. It is concluded that only high-mass-resolution SIMS or radioactive tracer analysis can be used for successful acquisition of information at this material system.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89f561c63754442fd0e46d118578b4a7 https://doi.org/10.1007/s00216-002-1544-z Zobrazit plný text záznamu Full text from SpringerLink