Field Effect Transistors Based on Composite Films of Poly(4-vinylphenol) with ZnO Nanoparticles
| Autor: | Thierry Trigaud, Rachid Zirmi, Nouh Ayoub, Bernard Ratier, Ouiza Boughias, M. S. Belkaid |
|---|---|
| Přispěvatelé: | RF-ELITE : RF-Electronique Imprimée pour les Télécommunications et l'Energie (XLIM-RFEI), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Permittivity Materials science [SPI.NRJ]Engineering Sciences [physics]/Electric power Relative permittivity 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 7. Clean energy 01 natural sciences Electronic Optical and Magnetic Materials Dielectric spectroscopy Threshold voltage [SPI]Engineering Sciences [physics] Chemical engineering Thin-film transistor 0103 physical sciences Poly-4-vinylphenol Materials Chemistry Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology ComputingMilieux_MISCELLANEOUS |
| Zdroj: | Journal of Electronic Materials Journal of Electronic Materials, Institute of Electrical and Electronics Engineers, 2018, ⟨10.1007/s11664-018-6087-y⟩ |
| ISSN: | 0361-5235 1543-186X |
| Popis: | In order to adjust the characteristic of pentacene thin film transistor, we modified the dielectric properties of the gate insulator, poly(4-vinylphenol), or PVP. PVP is an organic polymer with a low dielectric constant, limiting the performance of organic thin film transistors (OTFTs). To increase the dielectric constant of PVP, a controlled amount of ZnO nanoparticles was homogeneously dispersed in a dielectric layer. The effect of the concentration of ZnO on the relative permittivity of PVP was measured using impedance spectroscopy and it has been demonstrated that the permittivity increases from 3.6 to 5.5 with no percolation phenomenon even at a concentration of 50 vol.%. The performance of OTFTs in terms of charge carrier mobility, threshold voltage and linkage current was evaluated. The results indicate a dramatic increase in both the field effect mobility and the linkage current by a factor of 10. It has been demonstrated that the threshold voltage can be adjusted. It shifts from 8 to 0 when the volume concentration of ZnO varied from 0 vol.% to 50 vol.%. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink