Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers
| Autor: | Ke-Lu Zhang, Xiao-Ran Cui, Haiqiao Ni, Yingqiang Xu, Zhichuan Niu, Jing-Lun Li, Ding Ying, Su Xiangbin, Ben Ma, Ze-Sheng Chen |
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| Rok vydání: | 2018 |
| Předmět: |
Threshold current
Materials science Annealing (metallurgy) Laser Nanochemistry 02 engineering and technology 01 natural sciences Annealing law.invention Condensed Matter::Materials Science law 0103 physical sciences Quantum dot (QD) Bimodal size lcsh:TA401-492 General Materials Science 010302 applied physics business.industry Nano Idea Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Molecular beam epitaxy (MBE) Active layer Wavelength Quantum dot laser Quantum dot Optoelectronics lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology business |
| Zdroj: | Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018) Nanoscale Research Letters |
| ISSN: | 1556-276X 1931-7573 |
| DOI: | 10.1186/s11671-018-2472-y |
| Popis: | The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm2 was demonstrated. |
| Databáze: | OpenAIRE |
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