Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells

Autor:	Jan Schmidt, Antoine Descoeudres, Matthieu Despeisse, Dimitri Zielke, Ralf Gogolin, Christophe Ballif
Rok vydání:	2017
Předmět:	Solar cells Silicon Surface passivation heterojunctions Materials science Passivation a-Si:H Conducting polymers chemistry.chemical_element 02 engineering and technology Layer stacks 01 natural sciences Silicon wafers Crystalline silicons Hole selective layers law.invention PSS [PEDOT] Voc potential PEDOT:PSS law 0103 physical sciences Solar cell Silicon solar cells Wafer Crystalline silicon Dewey Decimal Classification::300 | Sozialwissenschaften Soziologie Anthropologie::330 | Wirtschaft::333 | Boden- und Energiewirtschaft::333 7 | Natürliche Ressourcen Energie und Umwelt 010302 applied physics Conductive polymer H [a-Si] Crystalline silicon wafers business.industry Crystalline materials Heterojunction 021001 nanoscience & nanotechnology chemistry ddc:333.7 Optoelectronics 0210 nano-technology business ddc:333 7
Zdroj:	Energy Procedia 124 (2017)
ISSN:	1876-6102
Popis:	In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon. © 2017 The Authors. Published by Elsevier Ltd.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89a886b473c2037923258ca57e63d4db https://doi.org/10.1016/j.egypro.2017.09.295 Zobrazit plný text záznamu