Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode
| Autor: | Tihomir Knezevic, Lovro Markovic, Tomislav Suligoj |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Oxide Schottky diode chemistry.chemical_element Heterojunction Germanium 02 engineering and technology Epitaxy 01 natural sciences chemistry.chemical_compound aluminum germanium Schottky barriers semiconductor defects epitaxial growth heterojunctions Ge-on-Si chemistry Aluminium 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics 020201 artificial intelligence & image processing business Layer (electronics) Diode |
| Zdroj: | MIPRO |
| DOI: | 10.23919/mipro48935.2020.9245134 |
| Popis: | In this work, different mechanisms that could cause degradation of the ideality factor in Al/Ge Schottky diodes on Si substrate are examined. Measured I-V characteristics of Schottky diodes have been fitted by the model of the diode developed in TCAD environment. The effects of Shockley-Read-Hall recombination parameters of epitaxial Ge on the I-V characteristics are simulated. The impact of interface traps on both Al/Ge and Ge/Si interfaces, as well as the effect of a buffer oxide layer on Al/Ge interface are analyzed by simulations providing a possible explanation for a degraded ideality factor in Al/Ge-on-Si Schottky diodes. |
| Databáze: | OpenAIRE |
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