Investigation of high-frequency fine structure in the current output of shaped contact planar Gunn diodes
| Autor: | Ata Khalid, A. Mindil, C. H. Oxley, G M Dunn |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
01 natural sciences law.invention Gallium arsenide chemistry.chemical_compound Planar law 0103 physical sciences Gallium arsenide (GaAs) Waveform Electrical and Electronic Engineering Monte Carlo Diode 010302 applied physics multiple peaks planar Gunn diode business.industry high frequency Cathode Electronic Optical and Magnetic Materials Anode chemistry Optoelectronics Electric potential business Gunn diode |
| ISSN: | 0018-9383 |
| Popis: | A novel gallium arsenide (GaAs) planar Gunn diode design with shaped anode and cathode contacts using Monte Carlo simulations has been shown to produce significantly higher frequency fine structure components in the output waveform than the natural transit time frequency of the diode. We have investigated devices without a feed- back potential and devices with a feedback potential (in the delayed mode) and have shown 350-GHz fine structure frequency components in a device with a nominal transit time frequency of 70 GHz is possible. This is the first observation of such stable repeating high-frequency components in a Gunn diode, giving potential for very high-frequency power generation and other wave-shaping applications. |
| Databáze: | OpenAIRE |
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