PLD of HgCdTe on two kinds of Si substrate
| Autor: | G. Wisz, T.Ya. Gorbach, R. Ciach, S.V. Svechnikov, A. Rakowska, Petro Smertenko, Marian Kuzma, E. Sheregii |
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| Rok vydání: | 1999 |
| Předmět: |
Morphology (linguistics)
Materials science Scanning electron microscope Analytical chemistry General Physics and Astronomy Heterojunction Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Microstructure Surfaces Coatings and Films Pulsed laser deposition Torr Deposition (law) |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(98)00441-3 |
| Popis: | Films of HgCdTe have been obtained by pulse laser deposition method in dynamic vacuum (pressure∼10 −6 Torr) at 293–543 K. Two different kinds of Si surface were used as substrate: (a) flat standard polished {100} surface and (b) anisotropically chemically etched patterned surface. The results of a scanning electron microscopy investigation, electron probe microanalysis and I – V characteristic measurements showed a strong influence of the substrate kind on the morphology, composition, growth mode, growth defects and transport of HgCdTe/Si heterostructure. |
| Databáze: | OpenAIRE |
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