Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
| Autor: | Peter J. Wellmann, Alexandre Crisci, Laurent Auvray, Michel Mermoux, Michel Pons, Ralf R. Muller, Aurelie Thuaire |
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| Přispěvatelé: | Department of Materials Science 6, Friedrich-Alexander Universität Erlangen-Nürnberg (FAU), Laboratoire de thermodynamique et physico-chimie métallurgiques (LTPCM), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG), Laboratoire d'Electrochimie et de Physico-chimie des Matériaux et des Interfaces (LEPMI ), Institut de Chimie du CNRS (INC)-Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Joseph Fourier - Grenoble 1 (UJF)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Opacity chemistry.chemical_element 02 engineering and technology 01 natural sciences symbols.namesake Optics Aluminium 0103 physical sciences Homogeneity (physics) General Materials Science Wafer ComputingMilieux_MISCELLANEOUS 010302 applied physics Birefringence business.industry Mechanical Engineering Doping [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials symbols Optoelectronics Charge carrier 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Materials Science Forum Materials Science Forum, Trans Tech Publications Inc., 2005, 483?485, pp. 393-396. ⟨10.4028/0-87849-963-6.393⟩ |
| ISSN: | 1662-9752 0255-5476 1662-9760 |
| DOI: | 10.4028/www.scientific.net/msf.483-485.393 |
| Popis: | We have studied the application of optical techniques for the determination of the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers. Absorption and birefringence mapping are known to be sensitive characterization methods to determine the homogeneity of charge carrier concentration and defects in n-type SiC. In the case of highly p-type doped SiC these methods fail due to the opaque character of the material. In this paper we show that Raman spectroscopy which is a reflective method can be used in order to address the same materials properties like absorption and birefringence. The study was performed using medium doped p-type SiC:Al where optical transmission and reflection methods can be applied simultaneously. |
| Databáze: | OpenAIRE |
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