Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si
| Autor: | Daehwan Jung, Arthur C. Gossard, Alan Y. Liu, Xue Huang, Minjoo Larry Lee, Justin Norman, John E. Bowers, Jon D. Peters |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Silicon business.industry Physics::Optics chemistry.chemical_element Germanium 02 engineering and technology 021001 nanoscience & nanotechnology Laser 01 natural sciences Atomic and Molecular Physics and Optics Semiconductor laser theory law.invention 010309 optics Condensed Matter::Materials Science Optics chemistry Quantum dot laser Quantum dot law 0103 physical sciences Continuous wave 0210 nano-technology business Lasing threshold |
| Zdroj: | Optics letters. 42(2) |
| ISSN: | 1539-4794 |
| Popis: | We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current densities around 860 A/cmsup2/supand 110 mW of single-facet output power for the same device. Ridge lasers designed for low threshold operations show maximum lasing temperatures up to 90°C and thresholds down to 30 mA. |
| Databáze: | OpenAIRE |
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