| Autor: |
U. Keil, A. Fatemi, H. Gaul, Heinrich Klar |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Advances in Radio Science, Vol 13, Pp 121-125 (2015) |
| ISSN: |
1684-9973 |
| Popis: |
This paper reports on a new SiGe driver IC to address the low breakdown voltage level of modern BiCMOS transistors. An optical modulator driver IC in SiGe 250 nm technology with a supply voltage of 4.5 V is presented. This driver IC consists of pre- and main driver stages where a newly modified cascode topology and capacitance degeneration technique is employed to meet current application requirements; high voltage swing at high datarate. The simulation results show a differential output voltage swing of 3.9 Vp-p at 14 Gbps data rate, according to the FDR Infiniband standard. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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