Phase Change Memory Cell With Reconfigured Electrode for Lower RESET Voltage
| Autor: | Yihan Chen, Shaowei Liao, Honglin Zhang, Mansun Chan, Kezhou Li, Shaolin Zhou |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Phase transition
Materials science capping electrode 02 engineering and technology cross-point structure 01 natural sciences 0103 physical sciences reset voltage Electrical and Electronic Engineering Phase change memory (PCM) 010302 applied physics business.industry 021001 nanoscience & nanotechnology Phase-change material Electronic Optical and Magnetic Materials Phase-change memory Electrode Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business Current density Reset (computing) lcsh:TK1-9971 Voltage drop Biotechnology Voltage |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 7, Pp 1072-1079 (2019) |
| ISSN: | 2168-6734 |
| Popis: | To reduce the reset voltage and thus leakage current of the cross-point architecture of phase change memory (PCM), a type of 1S1R cell hierarchy with reconfigured electrode capping around the phase change material is explored in this paper. The electro-thermal behavior during the RESET phase transition is mimicked using a finite element model. Results indicate that the temperature distribution, potential drop and current density across the active region can be reshaped. Especially, the process of temperature evolution for phase transition is accelerated and thus the PCM cell can be reset under a lower voltage, e.g., from 2.2 V to 1.2 V for our typical configuration with a GST width of 40 nm and heater width of 20 nm . As a result, the lower RESET voltage decreases the leakage current and power consumption, potentially leading to an increased integration level for cross-point PCM. |
| Databáze: | OpenAIRE |
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