Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides
| Autor: | Reza Salem, Alexander L. Gaeta, Carl B. Poitras, Amy C. Turner-Foster, Michal Lipson, Mark A. Foster, Jacob S. Levy |
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| Rok vydání: | 2010 |
| Předmět: |
Silicon
Materials science Light chemistry.chemical_element law.invention Electron Transport symbols.namesake Optics Electromagnetic Fields law Figure of merit Nanotechnology Scattering Radiation Diode business.industry Cross-phase modulation Equipment Design Atomic and Molecular Physics and Optics Nanostructures Equipment Failure Analysis chemistry Semiconductors Attenuation coefficient symbols Optoelectronics business Waveguide Refractive index Raman scattering |
| Zdroj: | Optics express. 18(4) |
| ISSN: | 1094-4087 |
| Popis: | We demonstrate reduction of the free-carrier lifetime in a silicon nanowaveguide from 3 ns to 12.2 ps by applying a reverse bias across an integrated p-i-n diode. This observation represents the shortest free-carrier lifetime demonstrated to date in silicon waveguides. Importantly, the presence of the p-i-n structure does not measurably increase the propagation loss of the waveguide. We derive a figure of merit demonstrating equal dependency of the nonlinear phase shift on free-carrier lifetime and linear propagation loss. |
| Databáze: | OpenAIRE |
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