Metal doping of dielectric thin layers by electric field assisted film dissolution
| Autor: | Vesna Janicki, Jordi Sancho-Parramon, Miodrag Oljaca, Boris Okorn |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Thin layers Dopant Borosilicate glass 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Chemical engineering Ellipsometry Glass Poling Atomic and Molecular Physics 0103 physical sciences Materials Chemistry Ceramics and Composites Thin film Metal doping Glass poling Electric field assisted dissolution Refractive index 0210 nano-technology Dissolution |
| Zdroj: | Journal of Non-Crystalline Solids |
| Popis: | The incorporation of metal ions in dielectric layers by means of electric field assisted film dissolution is investigated. The samples consist of alkali-containing glass substrates coated first with SiO 2 and then Ag thin films. The application of moderately elevated temperatures and DC voltages induces thermal poling in the glass matrix and metal film dissolution, resulting in the incorporation of metal ions in both dielectric layer and glass matrix. First, the process dynamics are simulated by modelling the migration of metal film ions and alkali species under an applied electric field. Numerical solution of the model indicates that metal ions progressively dope the dielectric layer until they reach the glass matrix. Then the dopant distribution in the layer becomes steady-state and further injection of ions contributes to increase the dopant concentration in glass. The influence on the process of alkali and dopant ion mobilities and alkali ion concentration is analysed. Additionally, Ag doping of SiO 2 layers deposited on soda-lime and borosilicate glasses is experimentally carried out and characterized using spectroscopic ellipsometry. The evolution of refractive index profiles through both, SiO 2 layer and glass substrate, is correlated with ion migration and confirms the model trends. Overall, this study shows that glass poling and film dissolution can be used to control metal doping of dielectric layers, with potential application in optical and photonic devices. |
| Databáze: | OpenAIRE |
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