Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon
| Autor: | Wolfgang Jäger, Kerstin Volz, Tobias Roesener, Gerald Siefer, A. Wekkeli, Christoph Weuffen, Frank Dimroth, E. Oliva, Andreas W. Bett, Thomas Hannappel, Stephanie Essig, D. Häussler |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
Silicon Wafer bonding Hybrid silicon laser chemistry.chemical_element wafer bonding 02 engineering and technology Quantum dot solar cell 01 natural sciences 7. Clean energy bonding Polymer solar cell law.invention Monocrystalline silicon law 0103 physical sciences Solar cell Silicium Wafer III-V Epitaxie und Solarzellen Electrical and Electronic Engineering 010302 applied physics business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Materialien - Solarzellen und Technologie Electronic Optical and Magnetic Materials chemistry III-V und Konzentrator-Photovoltaik Optoelectronics 0210 nano-technology business III-V auf Silicium |
| Popis: | Two different process technologies were investigated for the fabrication of high-efficiency GaInP/GaAs dual-junction solar cells on silicon: direct epitaxial growth and layer transfer combined with semiconductor wafer bonding. The intention of this research is to combine the advantages of high efficiencies in III-V tandem solar cells with the low cost of silicon. Direct epitaxial growth of a GaInP/GaAs dual-junction solar cell on a GaAsyP1-y buffer on silicon yielded a 1-sun efficiency of 16.4% (AM1.5g). Threading dislocations that result from the 4% lattice grading are still the main limitation to the device performance. In contrast, similar devices fabricated by semiconductor wafer bonding on n-type inactive Si reached efficiencies of 26.0% (AM1.5g) for a 4-cm2 solar cell device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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