Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells
| Autor: | Álvaro del Prado, Javier Olea, E. García-Hemme, R. García-Hernansanz, Ignacio Mártil, David Pastor, Germán González-Díaz, K. Sanchez, Perla Wahnón, Pablo Palacios |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Article Subject lcsh:TJ807-830 lcsh:Renewable energy sources Analytical chemistry Ab initio 02 engineering and technology Crystal structure 01 natural sciences 7. Clean energy law.invention law 0103 physical sciences Solar cell General Materials Science 010306 general physics Absorption (electromagnetic radiation) Telecomunicaciones Range (particle radiation) Renewable Energy Sustainability and the Environment business.industry General Chemistry 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Characterization (materials science) Ion implantation Transmission electron microscopy Energías Renovables Optoelectronics Electrónica Electricidad 0210 nano-technology business |
| Zdroj: | International Journal of Photoenergy, Vol 2013 (2013) International Journal of Photoenergy, ISSN 1110-662X, 2013, Vol. 2013 Archivo Digital UPM Universidad Politécnica de Madrid E-Prints Complutense: Archivo Institucional de la UCM Universidad Complutense de Madrid E-Prints Complutense. Archivo Institucional de la UCM instname |
| ISSN: | 1687-529X 1110-662X |
| DOI: | 10.1155/2013/473196 |
| Popis: | In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1in the photons energy range from 1.1 to 0.6 eV. |
| Databáze: | OpenAIRE |
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