Experimental characteristics and analysis of transverse modes in 1.3-μm strained InGaAs quantum well VCSELs
| Autor: | R. Stevens, Petrus Sundgren, Renaud Bachelot, S. Vilain, Ph. Grosse, E. Pougeoise, Gilles Lerondel, J. S. Bouillard, S. Poncet, G. Bourgeois, Mattias Hammar, Pascal Royer, Regis Hamelin, Jesper Berggren, A. Chelnokov, Ph. Gilet, Jean-Michel Gérard |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département de Recherche Fondamentale sur la Matière Condensée (DRFMC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Intexys Photonics, Royal Institute of Technology [Kista], Laboratoire de Nanotechnologie et d'Instrumentation Optique (LNIO), Institut Charles Delaunay (ICD), Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS)-Université de Technologie de Troyes (UTT)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
Optical fiber
Materials science business.industry Physics::Optics Laser 7. Clean energy law.invention Vertical-cavity surface-emitting laser chemistry.chemical_compound Condensed Matter::Materials Science Optics chemistry law [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics Near-field scanning optical microscope Metalorganic vapour phase epitaxy business Lasing threshold Indium gallium arsenide Quantum well |
| Zdroj: | SPIE Photonics Europe SPIE Photonics Europe, 2006, Strasbourg, France. pp.61850U, ⟨10.1117/12.662118⟩ |
| DOI: | 10.1117/12.662118⟩ |
| Popis: | International audience; In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre. |
| Databáze: | OpenAIRE |
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