Area selective deposition of silicon by plasma enhanced chemical vapor deposition using a fluorinated precursor
| Autor: | Erik Johnson, Daniel Suchet, Sergej Filonovich, Ghewa Akiki, Pavel Bulkin, D. Daineka |
|---|---|
| Přispěvatelé: | Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), TOTAL S.A., TOTAL FINA ELF |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
inorganic chemicals
Materials science Silicon genetic structures General Physics and Astronomy chemistry.chemical_element 02 engineering and technology Chemical vapor deposition Substrate (electronics) 010402 general chemistry 01 natural sciences complex mixtures chemistry.chemical_compound Etching (microfabrication) Plasma-enhanced chemical vapor deposition Crystalline silicon Thin film [PHYS]Physics [physics] technology industry and agriculture Surfaces and Interfaces General Chemistry equipment and supplies 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films stomatognathic diseases chemistry Chemical engineering Silicon nitride 0210 nano-technology |
| Zdroj: | Applied Surface Science Applied Surface Science, Elsevier, 2020, 531, pp.147305. ⟨10.1016/j.apsusc.2020.147305⟩ |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2020.147305⟩ |
| Popis: | International audience; An Area Selective Deposition (ASD) process using Plasma-Enhanced Chemical Vapour Deposition (PECVD) is demonstrated. Using a plasma chemistry containing a fluorinated silicon precursor (SiF 4), no deposition is observed on an aluminum oxide (AlO X) surface area, whereas a thin film of silicon is deposited on a silicon nitride (SiN X) surface area, while both areas are located on the same crystalline silicon substrate. The thin film deposition is characterized using spectroscopic ellipsometry, scanning electron microscopy, and atomic force microscopy, showing that 10 nm of silicon is deposited on the SiN x in 4 min. The growth on the SiN X is characterized by small grains and a rough surface, consistent with microcrystalline silicon, while no deposition or etching is observed for the AlO X surface. |
| Databáze: | OpenAIRE |
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