Graphene Quantum Strain Transistors
| Autor: | A. C. McRae, A. R. Champagne, G. Wei |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Band gap FOS: Physical sciences General Physics and Astronomy 02 engineering and technology 01 natural sciences 7. Clean energy law.invention Strain engineering law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 0103 physical sciences 010306 general physics Quantum Quantum optics Condensed Matter - Materials Science Condensed Matter - Mesoscale and Nanoscale Physics business.industry Graphene Transistor Materials Science (cond-mat.mtrl-sci) Charge density 021001 nanoscience & nanotechnology Flexible electronics Optoelectronics 0210 nano-technology business |
| Zdroj: | Physical Review Applied. 11 |
| ISSN: | 2331-7019 |
| DOI: | 10.1103/physrevapplied.11.054019 |
| Popis: | There is a wide range of science and applications accessible via the strain engineering of quantum transport in 2D materials. We propose a realistic experimental platform for uniaxial strain engineering of ballistic charge transport in graphene. We then develop an applied theoretical model, based on this platform, to calculate charge conductivity and demonstrate graphene quantum strain transistors (GQSTs). We define GQSTs as mechanically strained ballistic graphene transistors with on/off conductivity ratios $> 10^{4}$, and which can be operated via modest gate voltages. Such devices would permit excellent transistor operations in pristine graphene, where there is no band gap. We consider all dominant uniaxial strain effects on conductivity, while including experimental considerations to guide the realization of the proposal. We predict multiple strain-tunable transport signatures, and demonstrate that a broad range of realistic device parameters lead to robust GQSTs. These devices could find applications in flexible electronic transistors, strain sensors, and valleytronics. |
| Databáze: | OpenAIRE |
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