Narrow-linewidth short-pulse III-V-on-silicon mode-locked lasers based on a linear and ring cavity geometry
| Autor: | Peter Verheyen, Guy Lepage, G-H Duan, Xin Fu, Erwin Bente, Sylwester Latkowski, Francois Lelarge, J Marien, Sarah Uvin, J. Van Campenhout, M. Tassaert, Shahram Keyvaninia, Gunther Roelkens, L. Thomassen |
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| Přispěvatelé: | Photonic Integration |
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Technology and Engineering Silicon INSULATOR business.industry Photonic integrated circuit chemistry.chemical_element Physics::Optics Insulator (electricity) Geometry Laser Atomic and Molecular Physics and Optics law.invention Laser linewidth Optics Mode-locking chemistry GRATING COUPLERS law Phase noise Optoelectronics Physics::Accelerator Physics Photonics business PHOTONICS |
| Zdroj: | OPTICS EXPRESS Optics Express, 23(3), 3221-3229. Optical Society of America (OSA) |
| ISSN: | 1094-4087 |
| Popis: | Picosecond-pulse III-V-on-silicon mode-locked lasers based on linear and ring extended cavity geometries are presented. In passive mode-locked operation a 12 kHz -3dB linewidth of the fundamental RF tone at 4.7 GHz is obtained for the linear cavity geometry and 16 kHz for the ring cavity geometry. Stabilization of the repetition rate of these devices using hybrid mode-locking is also demonstrated. |
| Databáze: | OpenAIRE |
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