Ion Implantation for Deterministic Single Atom Devices

Autor:	Malcolm S. Carroll, Daniel Perry, Edward S. Bielejec, Ronald P. Manginell, Meenakshi Singh, Jose Pacheco, Michael Lilly, Joel R. Wendt, G. A. Ten Eyck, Dwight Luhman, Tammy Pluym
Rok vydání:	2017
Předmět:	Materials science FOS: Physical sciences 02 engineering and technology Applied Physics (physics.app-ph) engineering.material 01 natural sciences Focused ion beam Ion Physics::Plasma Physics 0103 physical sciences Atom Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 010306 general physics Instrumentation Gas chromatography ion detector Condensed Matter - Mesoscale and Nanoscale Physics business.industry Doping Diamond Physics - Applied Physics 021001 nanoscience & nanotechnology Charged particle Ion implantation engineering Optoelectronics 0210 nano-technology business
DOI:	10.48550/arxiv.1711.00792
Popis:	We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted location and the detection system is sensitive to single low energy heavy ions. This platform can be used to deterministically fabricate single atom devices in materials where the nanostructure and ion detectors can be integrated, including donor-based qubits in Si and color centers in diamond.
Databáze:	OpenAIRE
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