Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

Autor:	E. Aret, A.R.A. Zauner, S. Porowski, Jan L. Weyher, J.J. Schermer, W.J.P. van Enckevort
Rok vydání:	2002
Předmět:	Inorganic Chemistry Crystallography Morphology (linguistics) Misorientation Chemistry Materials Chemistry Metalorganic vapour phase epitaxy Substrate (electronics) Nitride Condensed Matter Physics Anisotropy Epitaxy Hillock
Zdroj:	Journal of Crystal Growth, 240, 1-2, pp. 14-21 Journal of Crystal Growth, 240, 14-21
ISSN:	0022-0248
Popis:	GaN single crystals are used as substrates for homo-epitaxial growth by MOCVD. Prior to growth, the N-face, or (0 0 0 1 ) plane, of the substrate crystals is polished to obtain off-angle orientations of 0, 2, and 4° towards the [1 1 2 0] direction. The hillock density of the homo-epitaxial films grown on the misoriented substrates is decreased as compared with the layers grown on the exact N-face. However, in addition to the hillocks, triangular-shaped pits are formed on the films grown on the misoriented substrates. The formation of the triangular-shaped pits is described by the blocking of the anisotropic step-flow growth.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::882b37eed59ef9098c2db94827846f34 https://hdl.handle.net/2066/112615 Zobrazit plný text záznamu Full Text from ScienceDirect