Optimum Design Rules for CMOS Hall Sensors
| Autor: | Enrico Sangiorgi, Marco Crescentini, Michele Biondi, Aldo Romani, Marco Tartagni |
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| Přispěvatelé: | Crescentini, M, Biondi, M, Romani, A, Tartagni, M, Sangiorgi, E |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Hall sensors
Engineering design rules current-related sensitivity power consumption 3D physical simulations Hall effect sensor design 02 engineering and technology 01 natural sciences Biochemistry Article Analytical Chemistry symbols.namesake 0202 electrical engineering electronic engineering information engineering Electronic engineering Electrical and Electronic Engineering design rule Instrumentation business.industry 020208 electrical & electronic engineering 010401 analytical chemistry Bandwidth (signal processing) Electrical engineering 3D physical simulation Atomic and Molecular Physics and Optics 0104 chemical sciences Magnetic field CMOS Power consumption symbols Embedding Hall effect sensor Hall sensor business Lorentz force |
| Zdroj: | Sensors (Basel, Switzerland) Sensors; Volume 17; Issue 4; Pages: 765 |
| ISSN: | 1424-8220 |
| Popis: | This manuscript analyzes the effects of design parameters, such as aspect ratio, doping concentration and bias, on the performance of a general CMOS Hall sensor, with insight on current-related sensitivity, power consumption, and bandwidth. The article focuses on rectangular-shaped Hall probes since this is the most general geometry leading to shape-independent results. The devices are analyzed by means of 3D-TCAD simulations embedding galvanomagnetic transport model, which takes into account the Lorentz force acting on carriers due to a magnetic field. Simulation results define a set of trade-offs and design rules that can be used by electronic designers to conceive their own Hall probes. |
| Databáze: | OpenAIRE |
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