| Autor: |
Simbürger, W., Bakalski, W., Kehrer, D., Wohlmuth, H.D., Rest, M., Aufinger, K., Boguth, S., Scholtz, A. L. |
| Jazyk: |
italština |
| Rok vydání: |
2001 |
| Předmět: |
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| Zdroj: |
Simbürger, W. ; Bakalski, W. ; Kehrer, D. ; Wohlmuth, H.D. ; Rest, M. ; Aufinger, K. ; Boguth, S. ; Scholtz, A. L. (2001) A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London. |
| Popis: |
A monolithic integrated radio-frequency power amplifier for the 5.8 GHz band has been realized in a 25 GHz-fT Si-bipolar production technology (B6HF). The 2-stage push-pull type power amplifier uses a planar on-chip transformer as input-balun and for interstage matching. A high-current cascode stage is used for the driver and for the output stage. At 2.7 V, 3.6 V, and 5 V supply voltage a maximum output power of 21.9 dBm, 24 dBm and 26 dBm at 5.8 GHz is achieved. The small-signal gain is 20 dB. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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