THE CONTROL AND EVALUATION OF BLUE-SHIFT IN GAINAS/GAINASP MULTIPLE-QUANTUM-WELL STRUCTURES FOR INTEGRATED LASERS AND STARK-EFFECT MODULATORS

Autor: Robin J. Nicholas, J. Thompson, Siu Ling Wong, N. J. Long, B Hamilton, Andrew G. Norman, K Scarrott, Robert W. Martin, G.R. Booker, A Chew, D.E. Sykes, R. E. Mallard, J M Jowett, Klaus Satzke, R E Pritchard, S A Galloway, E J Thrush
Jazyk: angličtina
Rok vydání: 1993
Předmět:
Zdroj: SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 8(6)
ISSN: 1361-6641
0268-1242
Popis: The authors report on the structural and optical characterization of nominally lattice-matched GaInAs/GaInAsP multiple quantum well (MQW) structures grown on (100) InP substrates by metalorganic chemical vapour deposition (MOCVD) which undergo a 'blue shift' in photoluminescence upon thermal annealing. Electron microscope and magneto-optical analyses show that the shifts are principally due to layer interdiffusion, which results in a change in composition of the well centres. These compositional variations are quantitatively measured by high-resolution analytical electron microscopy. This analysis demonstrates that the diffusion of the group V elements in the undoped MQWS is faster than that of the group III elements, resulting in the incorporation of excess coherency strain in the material. Analysis of a number of samples grown on a variety of substrates shows that the wavelength shift is particularly large when the substrates are S doped, although the substrate dopant does not participate directly in the diffusion mechanism. The authors attribute this behavior to the typically low dislocation density of S-doped substrates. They report, for the first time, a direct measurement of the correlation between the spatial variation in the magnitude of the blue shift and the presence of dislocations in the MQWS.
Databáze: OpenAIRE