Trapping of negative and positive charges in Ge+ ion implanted silicon dioxide layers subjected to high-field electron injection
| Autor: | Wolfgang Skorupa, V. S. Lysenko, Alexei Nazarov, Thoralf Gebel, Lars Rebohle, I. N. Osiyuk |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Physics::Instrumentation and Detectors Annealing (metallurgy) Silicon dioxide Analytical chemistry Oxide silicon dioxide layers General Physics and Astronomy chemistry.chemical_element nanocluster Germanium Rutherford backscattering spectrometry Penning trap silicon based light emission Ion charge carrier trapping chemistry.chemical_compound chemistry Atom high-field electron injection germanium implantation |
| Zdroj: | Journal Applied Physics 94 (7): 4440-4448 OCT 1 2003 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1604934 |
| Popis: | Negative and positive charge trapping under constant current regime of high-field electron injection both from Al electrode and Si substrate in high-dose Ge+ ion implanted and then rapid thermal annealed thin-film dioxide has been studied. The negatively charged traps with >10-14 cm2, 1.8x10-15 cm2, 2x10-16 cm2 and 3x10-18 cm2 and generated positive charge with effective capture cross-section (5-7)x10-15 cm2 and 3.3x10-16 cm2 have been shown to be introduced into the oxide layer. A good correlation of the electron trap concentration with with a cross section of >10-14 cm2 and the concentration of the implanted Ge atoms, determined by RBS technique inside the oxide, have been observed. The decrease of Ge concentration within the oxide layer with increasing RTA duration have been associated with Ge atom outdiffision from the oxide at high-temperature annealing. The generated positive charge have been shown to be collected near the SiO2/Si interface during the high field electron injection, both from the Al and Si side. Correlation of the generated positive charge with the Ge atoms embedded in the SiO2/Si interface have been observed. The anode hole injection mechanism is suggested to be responsible for the observed generation of the positive charge. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|