Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses

Autor:	T. Wakrim, J.-L. Ogier, G. Just, V. Della Marca, Jérémy Postel-Pellerin, P. Chiquet
Přispěvatelé:	Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), STMicroelectronics [Rousset] (ST-ROUSSET), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)
Jazyk:	angličtina
Rok vydání:	2014
Předmět:	Engineering business.industry Charge trap flash Electrical engineering Non-volatile random-access memory [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics business Hot electron Flash memory ComputingMilieux_MISCELLANEOUS Communication channel
Zdroj:	2014 International Semiconductor Conference (CAS) 2014 International Semiconductor Conference (CAS), Oct 2014, Sinaia, France. ⟨10.1109/SMICND.2014.6966433⟩
Popis:	International audience
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::878b910082f26a11194c4b5b8ad76a8a https://hal.archives-ouvertes.fr/hal-01760566 Zobrazit plný text záznamu