Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field

Autor: J. A. Budagosky, Alberto García-Cristóbal, Núria Garro, S. Founta, Ana Cros, Bruno Daudin
Přispěvatelé: Univ Valencia, Inst Ciencia Mat, E-46980 Paterna, Valencia, Spain, Interactions et dynamique des environnements de surface (IDES), Université Paris-Sud - Paris 11 (UP11)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Jazyk: angličtina
Rok vydání: 2016
Předmět:
Materials science
Photoluminescence
Stacking
FOS: Physical sciences
02 engineering and technology
Electronic structure
01 natural sciences
symbols.namesake
Condensed Matter::Materials Science
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
0103 physical sciences
General Materials Science
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
ComputingMilieux_MISCELLANEOUS
Wurtzite crystal structure
010302 applied physics
[PHYS]Physics [physics]
Condensed matter physics
Condensed Matter - Mesoscale and Nanoscale Physics
Mechanical Engineering
Quantum-confined Stark effect
Ciència dels materials
021001 nanoscience & nanotechnology
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Stark effect
Mechanics of Materials
Quantum dot
symbols
Cristalls
0210 nano-technology
Stacking fault
Zdroj: Budagosky Marcilla, Jorge Alejandro Garro Martínez, Núria Cros Stotter, Ana García Cristóbal, Alberto Founta, S. Daudin, Bruno 2016 Optical properties of wurtzite GaN/AlN quantum dots grown on non-polar planes: the effect of stacking faults in the reduction of the internal electric field Materials Science in Semiconductor Processing 49 76 80
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, 2016, 49, pp.76-80
RODERIC. Repositorio Institucional de la Universitat de Valéncia
instname
Materials Science in Semiconductor Processing, Elsevier, 2016, 49, pp.76-80
ISSN: 1369-8001
Popis: The optical emission of non-polar GaN/AlN quantum dots has been investigated. The presence of stacking faults inside these quantum dots is evidenced in the dependence of the photoluminescence with temperature and excitation power. A theoretical model for the electronic structure and optical properties of non-polar quantum dots, taking into account their realistic shapes, is presented which predicts a substantial reduction of the internal electric field but a persisting quantum confined Stark effect, comparable to that of polar GaN/AlN quantum dots. Modeling the effect of a 3 monolayer stacking fault inside the quantum dot, which acts as zinc-blende inclusion into the wurtzite matrix, results in an additional 30 % reduction of the internal electric field and gives a better account of the observed optical features.
5 pages, 4 figures, preprint submitted to Material Science in Semiconductor Processing
Databáze: OpenAIRE
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