Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
| Autor: | W. Chikhaoui, Catherine Bru-Chevallier, Christian Dua, Jean-Marie Bluet, N. Sarazin, M.-A. Poisson |
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| Přispěvatelé: | INL - Spectroscopies et Nanomatériaux (INL - S&N), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Thales Research and Technology [Palaiseau], THALES, Alcatel-Thalès, Marcoussis (91), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
010302 applied physics
Materials science Deep-level transient spectroscopy Physics and Astronomy (miscellaneous) business.industry Wide-bandgap semiconductor Schottky diode 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences Fourier transform spectroscopy Barrier layer [SPI]Engineering Sciences [physics] 0103 physical sciences Optoelectronics Metalorganic vapour phase epitaxy [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics 0210 nano-technology business ComputingMilieux_MISCELLANEOUS Leakage (electronics) |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2010, 96 (7), ⟨10.1063/1.3326079⟩ |
| ISSN: | 0003-6951 |
| Popis: | In order to assess possible mechanisms of gate reverse-bias leakage current in AlInN/GaN high electron mobility transistors (HEMTs) grown by metalorganic chemical-vapor deposition on SiC substrates, temperature-dependent current-voltage measurements combined with Fourier transform current deep level transient spectroscopy (FT-CDLTS) are performed in the temperature range of 200–400 K. In this range of temperature reverse-bias leakage current flow is found to be dominated by Poole–Frenkel emission. Based on CDLTS measurements, a model of leakage current transport via a trap state located at the AlInN/metal interface with an activation energy of 0.37 eV is suggested. The trap nature is shown to be an extended trap, most probably associated with dislocations in the AlInN barrier layer. |
| Databáze: | OpenAIRE |
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