Mapováni spinů povrchových a bulkových Rashba stavů v tenkých vrstvách feroelektrického α-GeTe(111)
| Autor: | R. Wallauer, Henrieta Volfová, Borek, Hubert Ebert, Jens Kellner, Sergey V. Chernov, Oliver Rader, Hans-Joachim Elmers, Christian Tusche, Katerina Medjanik, Jaime Sánchez-Barriga, Raffaella Calarco, Markus Morgenstern, Jürgen Braun, D. Kutnyakhov, Rui Ning Wang, Marcus Liebmann, Jos E. Boschker, Martin Ellguth, Jan Minár, Gerd Schönhense |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Point reflection
FOS: Physical sciences 02 engineering and technology DFT 01 natural sciences Condensed Matter::Materials Science Electric field 0103 physical sciences Rashba efect Texture (crystalline) 010306 general physics Controlling collective states Spin-½ Physics Condensed Matter - Materials Science Spin polarization Condensed matter physics Spintronics Materials Science (cond-mat.mtrl-sci) 021001 nanoscience & nanotechnology Helicity Ferroelectricity Rashba efekt 0210 nano-technology photoemission fotoemise |
| Popis: | Rozbíjení inverzní symetrie ve fereeleRashba efekt; Fotoemisse; DFTktrickém polovodiči způsobuje děleni stavů, tzv Rashba efekt. V tomto článku ukazujeme kompletně mapování spinové polarizace těchto Rashba stavů za pomoci spinovo rozlišené fotoemisse. The breaking of bulk inversion symmetry in ferroelectric semiconductors causes a Rashba-type spin splitting of electronic bulk bands. This is shown by a comprehensive mapping of the spin polarization of the electronic bands in ferroelectric α- GeTe(111) films using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of more than 10 000 data points. The experiment reveals an opposite spin helicity of the inner and outer Rashba bands with a different spin polarization in agreement with theoretical predictions, confirming a complex spin texture of bulk Rashba states. The outer band has about twice larger spin polarization than the inner one, giving evidence of a spin-orbit effect being related to the orbital composition of the band states. The switchable inner electric field of GeTe implies new functionalities for spintronic devices. |
| Databáze: | OpenAIRE |
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