Coexisting holes and electrons in high-TCmaterials: implications from normal state transport

Autor: Dale R. Harshman, John D. Dow, Anthony T. Fiory
Rok vydání: 2011
Předmět:
Zdroj: Philosophical Magazine. 91:818-840
ISSN: 1478-6443
1478-6435
Popis: Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) DC transport data reported for eight bulk-crystal and six oriented-film specimens of YBa2Cu3O7-{\delta}, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7-{\delta} and Bi2Sr2CaCu2O8+{\delta}. The electron band exhibits extremely strong scattering; the extrapolated DC residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole-electron analysis of Hall angle data suggest that the electrons possess the greater effective mass.
Comment: 22 pages, 7 figures, 4 tables and 78 references
Databáze: OpenAIRE