Field-effect transistor figures of merit for vapor–liquid–solid-grown Ge1-xSnx (x = 0.03–0.09) nanowire devices
| Autor: | Ray Duffy, Subhajit Biswas, Emmanuele Galluccio, Jessica Doherty, Justin D. Holmes |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Electron mobility
Ge1-xSnx Low-temperature processing Materials science Nanowire 02 engineering and technology 7. Clean energy 01 natural sciences 0103 physical sciences Materials Chemistry Electrochemistry Figure of merit Sub-threshold slope Electronics 010302 applied physics business.industry Nanowires Contact resistance Material system 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials MOSFETs Optoelectronics Field-effect transistor Vapor liquid Carrier mobility 0210 nano-technology business |
| Popis: | Ge1-xSnx alloys form a heterogeneous material system with high potential for applications in both optoelectronic and high-speed electronics devices. The attractiveness of Ge1-xSnx lies in the ability to tune the semiconductor band gap and electronic properties as a function of Sn concentration. Advances in Ge1-xSnx material synthesis have raised expectations recently, but there are considerable problems in terms of device demonstration. Although Ge1-xSnx thin films have been previously explored experimentally, in-depth studies of the electrical properties of Ge1-xSnx nanostructures are very limited, specifically those on nanowires grown via a bottom-up vapor–liquid–solid (VLS) process using metal catalysts. In this study, a detailed electrical investigation is presented of nominally undoped Ge1-xSnx bottom-up-grown nanowire devices with different Sn percentages (3–9 at. %). The entire device fabrication process is performed at relatively low temperatures, the maximum temperature being 440 °C. Device current modulation is performed through backgating from a substrate electrode, achieving impressive on–off current (ION/IOFF) ratios of up to 104, showing their potential for electronic and sensor-based applications. Contact resistance (RC) extraction is essential for proper VLS-grown nanowire device electrical evaluation. Once the RC contribution is extracted and removed, parameter values such as mobility can change significantly, by up to 70% in this work. When benchmarked against other Ge1-xSnx electronic devices, the VLS-grown nanowire devices have potential in applications where a high ION/IOFF ratio is important and where thermal budget and processing temperatures are required to be kept to minimum. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|