In situ tuning of symmetry-breaking induced non-reciprocity in giant-Rashba semiconductor BiTeBr
| Autor: | Péter Kun, Kenji Watanabe, Konstantin A. Kokh, Takashi Taniguchi, Endre Tóvári, O. Tereshchenko, Szabolcs Csonka, Péter Makk, Oleksandr Zheliuk, Mátyás Kocsis, Jianting Ye |
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| Přispěvatelé: | Device Physics of Complex Materials |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics business.industry Ionic bonding FOS: Physical sciences Gating Magnetic field Coupling (electronics) symbols.namesake Semiconductor Nanocrystal Mesoscale and Nanoscale Physics (cond-mat.mes-hall) symbols Symmetry breaking van der Waals force business |
| Zdroj: | Physical Review Research, 3(3):033253. American Physical Society |
| ISSN: | 2643-1564 |
| DOI: | 10.48550/arxiv.2008.06003 |
| Popis: | Nonreciprocal transport, where the left-to-right-flowing current differs from the right-to-left-flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a noncentrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density; however, in situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hexagonal boron nitride layer. Tuning the carrier density allows a more than 400% variation of the nonreciprocal response in our sample. Our study demonstrates how a few-atomic-layer-thick van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals. |
| Databáze: | OpenAIRE |
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