Processing high-quality silicon for microstrip detectors
| Autor: | Giampiero Ottaviani, L. Stagni, Filippo Nava, P. Cantoni, P.F. Manfredi, Stefano Frabboni, P. L. Frabetti, A. Alberigi Quaranta, G. Queirolo, Rita Tonini |
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| Jazyk: | angličtina |
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Fabrication Silicon business.industry Detector Metals and Alloys chemistry.chemical_element Ion implantation solid state detectors Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Quality (physics) chemistry Electrical resistivity and conductivity Electronic engineering Optoelectronics Electrical and Electronic Engineering business Instrumentation Silicon microstrip detectors Diode |
| Popis: | An investigation has been made into the behaviour of high-purity silicon (HP-Si) during the fabrication of microstrip detectors. The resistivity of the silicon used is 3 kΩcm. The investigation is centred on standard bipolar processes based on ion implantation. It is found that, comparing the processes used, the best diode characteristics are achieved when a heat treatment at 600 °C is used after the ion-implantation step, whereas the worst results from an implantation and a 900 °C heat treatment. Thus it is shown that if integration of the electronic circuitry and the detector on a single chip is required, then the high-temperature heat treatments must be done before the ion-implantation step needed for detector fabrication. |
| Databáze: | OpenAIRE |
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