Improvement on well design and operation of potential well barrier diodes
| Autor: | Mohamed Missous, Mise Akura, G. M. Dunn |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
0301 basic medicine
Materials science Responsivity Gallium nitride Gallium arsenide 03 medical and health sciences chemistry.chemical_compound 0302 clinical medicine Electrical and Electronic Engineering Curvature coefficient Diode Turn-on voltage business.industry Barrier height Schottky diode Monte Carlo model Condensed Matter Physics Electronic Optical and Magnetic Materials 030104 developmental biology chemistry Optoelectronics Electric potential business Current density 030217 neurology & neurosurgery Voltage |
| Zdroj: | Akura, M, Dunn, G & Missous, M 2020, Improvement on well design and operation of potential well barrier diodes . in 2019 42nd International Semiconductor Conference, CAS 2019-Proceedings ., 8923974, Proceedings of the International Semiconductor Conference, CAS, vol. 2019-October, IEEE, pp. 169-172, 42nd International Semiconductor Conference, Sinaia, Romania, 9/10/19 . https://doi.org/10.1109/SMICND.2019.8923974 |
| Popis: | The flexibility in design of the potential well in PWB diodes has shown promising prospects for zero-bias operation capability and improvements in the overall performance of the diode. We consider the right intrinsic region whilst regrading further the Ga4s well The performance of the diodes was measured and compared in terms of the turn-on voltage and curvature coefficient. We found that the turn on voltage of the diodes improves significantly with increases in the graded regions. At a current density of 0.5× 10-12 Amperes per meters square, the diodes with graded regions 0.01, 0.03 and 0.05 mircons have turn-on voltages of 0.85, 0.5 and 0. 38 Volts, while the curvature coefficient estimated at 0. 5V was respectively obtained to be 6. 4, 10. 3 and 20. 1 per volt. |
| Databáze: | OpenAIRE |
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