Properties of anodic oxides grown on a hafnium–tantalum–titanium thin film library
Autor: | Achim Walter Hassel, Alan Savan, Alfred Ludwig, Andrei Ionut Mardare |
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Rok vydání: | 2014 |
Předmět: |
Materials science
lcsh:Biotechnology Oxide Tantalum Analytical chemistry chemistry.chemical_element 02 engineering and technology 010402 general chemistry 01 natural sciences Combinatorial libraries chemistry.chemical_compound Anodic oxide film X-ray photoelectron spectroscopy lcsh:TP248.13-248.65 lcsh:TA401-492 General Materials Science Thin film High-throughput experimentation Anodizing 021001 nanoscience & nanotechnology 0104 chemical sciences Amorphous solid Hafnium Dielectric spectroscopy chemistry Papers lcsh:Materials of engineering and construction. Mechanics of materials Scanning droplet cell microscopy 0210 nano-technology |
Zdroj: | Science and Technology of Advanced Materials Science and Technology of Advanced Materials, Vol 15, Iss 1, p 015006 (2014) |
ISSN: | 1878-5514 1468-6996 |
Popis: | A ternary thin film combinatorial materials library of the valve metal system Hf–Ta–Ti obtained by co-sputtering was studied. The microstructural and crystallographic analysis of the obtained compositions revealed a crystalline and textured surface, with the exception of compositions with Ta concentration above 48 at.% which are amorphous and show a flat surface. Electrochemical anodization of the composition spread thin films was used for analysing the growth of the mixed surface oxides. Oxide formation factors, obtained from the potentiodynamic anodization curves, as well as the dielectric constants and electrical resistances, obtained from electrochemical impedance spectroscopy, were mapped along two dimensions of the library using a scanning droplet cell microscope. The semiconducting properties of the anodic oxides were mapped using Mott–Schottky analysis. The degree of oxide mixing was analysed qualitatively using x-ray photoelectron spectroscopy depth profiling. A quantitative analysis of the surface oxides was performed and correlated to the as-deposited metal thin film compositions. In the concurrent transport of the three metal cations during oxide growth a clear speed order of Ti > Hf > Ta was proven. |
Databáze: | OpenAIRE |
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