Radiation Effects on High-Speed InGaAs Photodiodes
| Autor: | Lauri Olantera, Paulo Moreira, Freya Lily Bottom, Mohsine Menouni, Stephane Detraz, Carmelo Scarcella, Francois Vasey, Csaba Soos, C Sigaud, Andrea Kraxner, Jan Troska |
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| Přispěvatelé: | Centre de Physique des Particules de Marseille (CPPM), Aix Marseille Université (AMU)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Aix Marseille Université (AMU) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Orders of magnitude (temperature) 01 natural sciences Capacitance Receivers law.invention Gallium arsenide chemistry.chemical_compound Responsivity Sensitivity photodiodes law 0103 physical sciences [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det] Electrical and Electronic Engineering 010308 nuclear & particles physics business.industry dark current Photodiode Nuclear Energy and Engineering chemistry Capacitance–voltage characteristics Indium phosphide radiation effects Optoelectronics Protons business Indium gallium arsenide Dark current |
| Zdroj: | IEEE Trans.Nucl.Sci. Conference on Radiation and its Effects on Components and Systems Conference on Radiation and its Effects on Components and Systems, Sep 2018, Gothenburg, Sweden. pp.1663-1670, ⟨10.1109/TNS.2019.2902624⟩ |
| DOI: | 10.1109/TNS.2019.2902624⟩ |
| Popis: | International audience; Photodiodes are important components in optical data links, and their performance degradation under irradiation has to be understood in order to guarantee the long-term functionality of the data links in radiation environments of high-energy physics experiments. Indium gallium arsenide (InGaAs) on indium phosphide (InP) photodiodes are attractive candidates for these applications, thanks to their relatively modest radiation-induced responsivity loss when operated at 850 nm. In this paper, we present the results that confirm earlier observed additional sensitivity penalties in InGaAs-based receivers. This behavior is further investigated by carrying out several proton tests where InGaAs photodiodes are irradiated together with alternative photodiode types. The critical parameters—responsivity, dark current, and capacitance—are measured up to fluences exceeding ${1\times 10^{16}}$ p/cm2. Radiation-induced dark current is shown to be orders of magnitude higher in InGaAs photodiodes than in GaAs and InGaAs on GaAs photodiodes. However, instead of the dark current increase, the additional losses with InGaAs photodiodes are shown to arise from strongly increased capacitance, which is a dominant feature only in InGaAs photodiodes. This is confirmed with simulations where the measured capacitance characteristics are used in the device model. Our results show that without precautions in the receiver design, radiation-induced capacitance can limit the use of InGaAs photodiodes in harsh radiation environments. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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