Plasma oxidation of polyhedral oligomeric silsesquioxane polymers
| Autor: | David Eon, Panagiotis Argitis, Evangelos Gogolides, Nikolaos Vourdas, V. Raballand, Gilles Cartry, Christophe Cardinaud |
|---|---|
| Přispěvatelé: | Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN) |
| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: |
010302 applied physics
Materials science Bilayer Oxide 02 engineering and technology Photoresist 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Silsesquioxane chemistry.chemical_compound Resist X-ray photoelectron spectroscopy chemistry Chemical engineering Etching (microfabrication) 0103 physical sciences [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Organic chemistry Electrical and Electronic Engineering 0210 nano-technology Silicon oxide |
| Zdroj: | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2006, 24, pp.2678. ⟨10.1116/1.2382947⟩ |
| ISSN: | 0734-211X 1520-8567 |
| DOI: | 10.1116/1.2382947⟩ |
| Popis: | International audience; Copolymers containing polyhedral oligomeric silsesquioxane (POSS™) units have been developed to be used as photoresist components in a bilayer resist scheme for 193 nm lithography. This article reports on the behavior of these new POSS based materials under oxygen plasmas. The authors demonstrate using in situ ellipsometry and in situ x-ray photoelectron spectroscopy that during the first seconds in the plasma a silicon oxide layer is formed on the top surface of the POSS materials. This superficial layer prevents etching and material consumption. An ion-enhanced oxidation model is proposed to describe and explain the experimental data and further investigate POSS etching mechanisms in oxygen plasma. The model shows that the oxide formation rate is reduced exponentially with the oxide thickness. It also predicts that thickness loss has its main roots in the layer densification that occurs when the oxide is formed and shows that the oxide formation is ion enhanced and thus favored at −100 V compared to 0 V bias |
| Databáze: | OpenAIRE |
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