Stable and low resistive zinc contacts for SnS based optoelectronic devices
| Autor: | M. Devika, N. Koteeswara Reddy, K. R. Gunasekhar |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Band gap Aerospace Engineering(Formerly Aeronautical Engineering) Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Zinc Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Electrical resistivity and conductivity Centre for Nano Science and Engineering Materials Chemistry Optoelectronics Instrumentation Appiled Physics business Tin Ohmic contact Electrical conductor Layer (electronics) Stoichiometry |
| Zdroj: | Thin Solid Films. 558:326-329 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2014.02.083 |
| Popis: | The contact behavior of tin mono sulfide (SnS) nanocrystalline thin films with zinc (Zn) and silver (Ag) contacts was studied. SnS films have been deposited on glass substrates by thermal evaporation technique at a growth temperature of 300 degrees C. The as-grown SnS films composed of vertically aligned nanocrystallites with a preferential orientation along the < 010 > direction. SnS films exhibited excellent chemical stoichiometry and direct optical band gap of 1.96 eV. These films also exhibited excellent Ohmic characteristics and low electrical resistivity with Zn contacts. The observed electrical resistivity of SnS films with Zn contacts is 22 times lower than that of the resistivity with Ag contacts. The interfacing analysis reveals the formation of conductive Zn-S layer between SnS and Zn as interfacial layer. (C) 2014 Elsevier B. V. All rights reserved. |
| Databáze: | OpenAIRE |
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