Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT

Autor: Irina Galben, Didier Chaussende, Teddy Robert, Sandrine Juillaguet, Jessica Eid, Georgios Zoulis, Jean Camassel, Antoine Tiberj
Přispěvatelé: Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2008
Předmět:
Zdroj: SILICON CARBIDE AND RELATED MATERIALS 2008
7th European Conference on Silicon Carbide and Related Materials
7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48
Popis: International audience; We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the Structural defects. like stacking faults and dislocations. The effect of changing the nitrogen flow rate oil the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques.
Databáze: OpenAIRE