Nitrogen Doping of 3C-SiC Single Crystals Grown by CF-PVT
Autor: | Irina Galben, Didier Chaussende, Teddy Robert, Sandrine Juillaguet, Jessica Eid, Georgios Zoulis, Jean Camassel, Antoine Tiberj |
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Přispěvatelé: | Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS) |
Jazyk: | angličtina |
Rok vydání: | 2008 |
Předmět: |
Low temperature photoluminescence
Materials science Stacking Nitrogen doping Analytical chemistry 02 engineering and technology 01 natural sciences chemistry.chemical_compound symbols.namesake Condensed Matter::Materials Science N doping Etching (microfabrication) 0103 physical sciences Silicon carbide SILICON-CARBIDE General Materials Science KOH etching 3C-SiC PHYSICAL VAPOR TRANSPORT 010302 applied physics Mechanical Engineering Cubic silicon carbide 021001 nanoscience & nanotechnology Condensed Matter Physics Nitrogen flow rate CONTINUOUS FEED Crystallography CF-PVT chemistry Mechanics of Materials symbols [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] 0210 nano-technology Raman spectroscopy |
Zdroj: | SILICON CARBIDE AND RELATED MATERIALS 2008 7th European Conference on Silicon Carbide and Related Materials 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.45-48 |
Popis: | International audience; We present a structural and optical investigation of nitrogen-doped single crystals of cubic silicon carbide prepared by the continuous feed - physical vapour transport method. Self-nucleated crystals were produced which exhibited well faceted square and triangular shapes. KOH etching was used to characterize the Structural defects. like stacking faults and dislocations. The effect of changing the nitrogen flow rate oil the different crystalline orientations was investigated by Raman spectroscopy and low temperature photoluminescence techniques. |
Databáze: | OpenAIRE |
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