Electromigration in indium thin films
| Autor: | K. V. Reddy, J. J. B. Prasad |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 1984 |
| Předmět: |
Materials science
Condensed matter physics Scattering TRACER SCANNING TECHNIQUES Analytical chemistry General Physics and Astronomy chemistry.chemical_element Atmospheric temperature range ELECTROMIGRATION Electromigration Effective nuclear charge SEMICONDUCTOR MATERIALS - Charge Carriers chemistry SEMICONDUCTING INDIUM Melting point Grain boundary Current density Indium |
| Zdroj: | IndraStra Global. |
| ISSN: | 2381-3652 |
| Popis: | Neutron activation and tracer scanning technique is employed to estimate the electromigration shift in indium thin films. The electromigration effective charge number Z* is determined as a function of current density at 399 K and it was noticed that 1.40?10 4 A/cm 2 is the threshold current density at this temperature. The variation of Z* with temperature is studied in the temperature range 352-418 K. The value of Z* is negative in the entire temperature range studied. The magnitude of Z* decreases initially, goes to a minimum at 384 K and increases rapidly above this temperature. Autoradiographs of some of the samples are also given which show the electromigration shift very clearly. The initial decrease in the magnitude of Z* is due to the increase of lattice scattering of electrons and the increase close to the melting point is attributed to the grain boundary melting of the material. |
| Databáze: | OpenAIRE |
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