BiCMOS technology improvements for microwave application
| Autor: | Angel Rodríguez, T. Nesheiwat, N. Zhang, F. Neuilly, Francis Zaato, E. Hijzen, J. Melai, HongJiang Sun, W.D. van Noort |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
METIS-255443 business.industry Heterojunction bipolar transistor Electrical engineering BiCMOS Cutoff frequency Silicon-germanium law.invention chemistry.chemical_compound Capacitor EWI-14875 chemistry law SC-RID: Radiation Imaging detectors IR-65297 Radio frequency business Electrical impedance Microwave |
| Zdroj: | Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008)., 93-96 STARTPAGE=93;ENDPAGE=96;TITLE=Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008 (BCTM 2008). |
| DOI: | 10.1109/bipol.2008.4662720 |
| Popis: | The third generation of NXP 0.25 mum SiGe BiCMOS technology (QUBiC4Xi) is presented. The NPN has fT/fmax of 216/177 GHz and BVcb0 of 5.2 V. The high-voltage NPN has 12 V BVcb0, and fT/fmax of 80/162 GHz. This is complemented with an improved MIM capacitor with 1THz cutoff frequency and new on-chip isolation structures that demonstrate a record |S12| of -60 dB at 10 GHz. |
| Databáze: | OpenAIRE |
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