| Autor: |
Wei-Chih Lai, Jinn-Kong Sheu, Shang-Ju Tu, F. W. Huang, Yu Hsiang Yeh, Chih-Ciao Yang, Ming-Lun Lee, Chung-Hsun Jang |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
Optics Express. 19:A695 |
| ISSN: |
1094-4087 |
| Popis: |
InGaN/sapphire-based photovoltaic (PV) cells with blue-band GaN/InGaN multiple-quantum-well absorption layers grown on patterned sapphire substrates were characterized under high concentrations up to 150-sun AM1.5G testing conditions. When the concentration ratio increased from 1 to 150 suns, the open-circuit voltage of the PV cells increased from 2.28 to 2.50 V. The peak power conversion efficiency (PCE) occurred at the 100-sun conditions, where the PV cells maintained the fill factor as high as 0.70 and exhibited a PCE of 2.23%. The results showed great potential of InGaN alloys for future high concentration photovoltaic applications. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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