Transport Phenomena in an Atmospheric-Pressure Townsend Discharge Fed by N2/N2O/HMDSO Mixtures
| Autor: | Nicolas Gherardi, Louison Maechler, Hubert Caquineau, Ionut Enache, Francoise Massines, Thierry Paulmier |
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| Přispěvatelé: | Pistre, Karine |
| Rok vydání: | 2007 |
| Předmět: |
Polymers and Plastics
Atmospheric pressure [SPI] Engineering Sciences [physics] Chemistry Atmospheric pressure glow discharges (APGD) Dielectric barrier discharges (DBD) Hexamethyldisiloxane (HMDSO) Modeling Thin-film deposition Analytical chemistry Thermodynamics Dielectric barrier discharge Plasma Condensed Matter Physics Dissociation (chemistry) Townsend discharge Fluid dynamics Thin film Transport phenomena |
| Zdroj: | Plasma Processes and Polymers. 4:806-814 |
| ISSN: | 1612-8869 1612-8850 |
| DOI: | 10.1002/ppap.200700073 |
| Popis: | This paper focuses on the understanding of the main mechanisms that participate in the growth process of an SiO 2 -like film in an atmospheric pressure Townsend discharge in N 2 with small ad-mixtures of HMDSO and N 2 O. The approach consists of analyzing the influence of operating parameters on the growth rate profile through a fluid dynamics model. The suggested chemical mechanism is constituted by one volume reaction and one surface reaction. This simple model enables us to assume which phenomena control the film growth process among the following mechanisms: HMDSO dissociation by N 2 (A 3 Σ + u ) in Si-containing radicals, radicals transport to the surface, and surface activation process by plasma. |
| Databáze: | OpenAIRE |
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