Determination of impurity distributions in ingots of solar grade silicon by neutron activation analysis
| Autor: | Christian Stieghorst, Barbara Karches, Patricia Krenckel, Norbert Wiehl, C. Plonka, Bernard Ponsard, G. Hampel, H. Gerstenberg, Stephan Riepe, Jonas Schön |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Silicon Metallurgy chemistry.chemical_element directional solidification 02 engineering and technology solar silicon 021001 nanoscience & nanotechnology 01 natural sciences Materialien - Solarzellen und Technologie Kristallisation und Wafering transition metals Silicium-Photovoltaik chemistry Impurity Photovoltaik 0103 physical sciences Physical and Theoretical Chemistry Neutron activation analysis 0210 nano-technology feedstock neutron activation analysis |
| Popis: | In a series of crystallization experiments, the directional solidification of silicon was investigated as a low cost path for the production of silicon wafers for solar cells. Instrumental neutron activation analysis was employed to measure the influence of different crystallization parameters on the distribution of 3d-metal impurities of the produced ingots. A theoretical model describing the involved diffusion and segregation processes during the solidification and cooling of the ingots could be verified by the experimental results. By successive etching of the samples after the irradiation, it could be shown that a layer of at least 60 μm of the samples has to be removed to get real bulk concentrations. |
| Databáze: | OpenAIRE |
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