Design Optimization of Thin-Film Transistors Based on a Metal–Substrate–Semiconductor Architecture for High DC Voltage Sensing
| Autor: | Ganapathy Saravanavel, Jaspal Singh, Sanjiv Sambandan, Sambashiva R. Udatha, Abhinav Ruhela, Vaddi Yaswant |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Transconductance Gate dielectric Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 01 natural sciences law.invention law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Instrumentation Appiled Physics Electrical and Electronic Engineering Leakage (electronics) Electronic circuit 010302 applied physics business.industry Transistor Electrical engineering High voltage 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Thin-film transistor Logic gate Optoelectronics 0210 nano-technology business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Electron Devices. 63:1696-1703 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2016.2535317 |
| Popis: | We discuss the potential application of high dc voltage sensing using thin-film transistors (TFTs) on flexible substrates. High voltage sensing has potential applications for power transmission instrumentation. For this, we consider a gate metal-substrate-semiconductor architecture for TFTs. In this architecture, the flexible substrate not only provides mechanical support but also plays the role of the gate dielectric of the TFT. Hence, the thickness of the substrate needs to be optimized for maximizing transconductance, minimizing mechanical stress, and minimizing gate leakage currents. We discuss this optimization, and develop n-type and p-type organic TFTs using polyvinyldene fluoride as the substrate-gate insulator. Circuits are also realized to achieve level shifting, amplification, and high drain voltage operation. |
| Databáze: | OpenAIRE |
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