Semiconductive behavior of Sb doped SnO2 thin films

Autor:	RM Wolf, Mwj Menno Prins, LF Lou Feiner, K.-O. Grosse-Holz, Pwm Paul Blom, J.F.M. Cillessen, Rainer Waser
Jazyk:	angličtina
Rok vydání:	1995
Předmět:	Materials science business.industry Transistor Doping Dielectric Conductivity law.invention Pulsed laser deposition law visual_art visual_art.visual_art_medium Optoelectronics Grain boundary Ceramic Thin film business
Zdroj:	MRS Online Proceedings Library, 401, 67-72. Springer
ISSN:	1946-4274
DOI:	10.1557/proc-401-67
Popis:	Sb doped SnO2 has been deposited on polished ceramic Al2O3 substrates by Pulsed Laser Deposition. Conductivity, charge carrier density and mobility of these thin films have been measured as a function of temperature. A model for the electrical properties of the films is proposed. Since Sb doped SnO2 is a transparent, high mobility material, it is shown that it can be used as channel material for an all-oxide thin film transparent field-effect transistor with a linear dielectric.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84ded22e33515c2abff88e96f01cd63f https://doi.org/10.1557/proc-401-67 Zobrazit plný text záznamu Full text from SpringerLink