Transport across meso-junctions of highly doped Si with different superconductors
Autor: | Sangita Bose, Pradnya Parab |
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Jazyk: | angličtina |
Rok vydání: | 2021 |
Předmět: |
Superconducting energy gap
Physics Superconductivity Condensed matter physics Schottky barrier Condensed Matter - Superconductivity Doping General Physics and Astronomy FOS: Physical sciences 01 natural sciences Spectral line 010305 fluids & plasmas Andreev reflection Superconductivity (cond-mat.supr-con) 0103 physical sciences Proximity effect (superconductivity) 010306 general physics Spectroscopy |
Popis: | We studied the transport properties of meso-junctions of semiconducting (Sm) highly doped Si with different superconductors (Sc) through point contact Andreev reflection (PCAR) spectroscopy. Spectra of low transparency point contacts between Si and In showed an enhancement in the superconducting energy gap of In. This was due to the effect of an additional gap arising from the Schottky barrier at the Sm-Sc interface. For higher transparency Si-Nb and Si-Pb point contacts, no gap enhancement was observed though there were weak sub gap features. These were due to proximity induced interface superconductivity known to occur for Sm-Sc junctions of high transparency. 25 pages, 5 figures |
Databáze: | OpenAIRE |
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