Plasma etched c-Si wafer with proper pyramid-like nanostructures for photovoltaic applications
| Autor: | M.L. Addonizio, Alessandro Antonaia, L. Fusco |
|---|---|
| Přispěvatelé: | Fusco, L., Antonaia, A., Addonizio, M. L. |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Dry etching Thin films General Physics and Astronomy Reflectance 02 engineering and technology Surface finish Substrate (electronics) 010402 general chemistry 01 natural sciences Wafer Thin film Texture Texture (crystalline) Reactive-ion etching Plasma etching business.industry technology industry and agriculture Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films Optoelectronics 0210 nano-technology business |
| Zdroj: | Applied Surface Science. :143-150 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2018.10.078 |
| Popis: | Dry and maskless texturing process of mono-crystalline silicon wafers using CF4/O2 plasma in a reactive ion etching (RIE) system has been developed with the aim of obtaining optimized surface texture characterized by low optical reflection loss for photovoltaic applications. In this study c-Si has been successfully subjected to plasma etching at unusual process conditions, specifically high value of substrate temperature (15 °C) coupled with high value of process pressure (40 Pa). Different c-Si surface textures are produced at different etch durations. Specifically, pyramid-like morphology appears at very short etch time and crater-like nanostructures form at longer etch time, whereas the former gives the lowest average reflectance ( |
| Databáze: | OpenAIRE |
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