Transient ALD simulations for a multi-wafer reactor with trenched wafers
| Autor: | B.D. Paarhuis, Chris R. Kleijn, P.J.P.M. Simons, Herbert Terhorst, A.M. Lankhorst |
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| Přispěvatelé: | TNO Industrie en Techniek |
| Jazyk: | angličtina |
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Chemical vapor deposition WSI circuits Physics::Geophysics Diffusion Trench Molecular deposition Materials Chemistry Electronic engineering Wafer Boundary value problem Mathematical models Boundary conditions Mathematical model Scattering Multi-wafer batch reactor Surfaces and Interfaces General Chemistry Mechanics Computer simulation Condensed Matter Physics Computer Science::Other Surfaces Coatings and Films Atomic layer deposition (ALD) Knudsen diffusion Electric reactors Electronics Order of magnitude Simulation |
| Zdroj: | Surface and Coatings Technology, 22-23 Spec. iss., 201, 8842-8848 |
| Popis: | For a large multi-wafer vertical batch ALD reactor, transient, 3-dimensional, multi-scale simulations have been performed for the TEMAH pulse step during a HfO2 ALD process. A bi-directional, multi-scale coupling has been established between continuum reactor scale simulations and molecular trench scale simulations. For describing the molecular deposition process inside narrow deep trenches, two different models have been developed and implemented as boundary condition for the flow simulation: an analytical model based on the model proposed by Gordon, and a numerical Knudsen diffusion model. Both trench models have been validated against DSMC simulation results for a single trench. Based on the 3D reactor simulation results, important timescales in the complete process are identified. It is found that several timescales are of the same order of magnitude, rendering predictions based on engineering rules more difficult. Timescales for trenched wafers are found to be much larger than for flat wafers, leading to much longer required cycle times. |
| Databáze: | OpenAIRE |
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